unisonic technologies co., ltd mje13002-e npn epitaxial silicon transistor www.unisonic.com.tw 1 of 8 copyright ? 2013 unisonic technologies co., ltd qw-r204-032.a high voltage fast-switching npn power transistor ? description the utc mje13002-e designed for use in high?volatge, high speed,power switching in inductive circuit, it is particularly suited for 115 and 220v switchmode applications such as switching regulator?s,inverters, dc-dc converter, motor control, solenoid/relay driv ers and deflection circuits. ? features *collector-emitter sustaining voltage: v ceo (sus)=300v. *collector-emitter saturation voltage: v ce(sat) =1.0v(max.) @i c =1.0a, i b =0.25a *switch time- tf =0.7 s(max.) @ic=1.0a. ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 mje13002l-e-x-t6s-k mje13002g-e-x-t6s-k to-126s b c e bulk mje13002l-e-x-t92-b mje13002g-e-x-t92-b to-92 b c e tape box mje13002l-e-x-t92-k mje13002g-e-x-t92-k to-92 b c e bulk mje13002l-e-x-t92-r mje13002g-e -x-t92-r to-92 b c e tape reel
mje13002-e npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r204-032.a ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo ( sus ) 300 v collector-emitter voltage v cev 600 v emitter base voltage v ebo 9 v collector current continuous i c 1.5 a peak (1) i cm 3 base current continuous i b 0.75 a peak (1) i bm 1.5 emitter current continuous i e 2.25 a peak (1) i em 4.5 total power dissipation ta=25c to-92 p d 1.0 watts mw/c to-126s 1.4 derate above 25c to-92 8 to-126s 11.2 tc=25c to-92 5 watts mw/c to-126s 40 derate above 25c to-92 40 to-126s 320 junction temperature t j 150 c storage temperature t stg -65 to +150 c ? thermal characteristics parameter symbol ratings unit junction to case to-92 jc 25 c/w to-126s 3.12 junction to ambient to-92 ja 122 c/w to-126s 89 maximum load temperature for soldering purposes: 1/8? from case for 5 seconds t l 275 c note: 1. pulse test : pulse width=5ms,duty cycle 10% 2. designer 's data for ?worst case? conditions ? t he designer 's data sheet permits the design of most circuits entirely from the information presented. so a limit curves ? representing boundaries on device characteristics ? are given to facilitate ?worst case? design.
mje13002-e npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r204-032.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics (1) collector-emitter sust aining voltage v ceo ( sus ) i c =10 ma , i b =0 300 collector cutoff current i cev v cev =rated value, v be (off)=1.5 v 1 v cev =rated value, v be (off)=1.5v,tc=100c 5 second breakdown dc current gain h fe1 i c =0.5 a, v ce =2 v 8 40 h fe2 i c =1 a, v ce =2 v 5 25 h fe3 i c =200ma, v ce =10v 9 40 collector-emitter satu ration voltage v ce(sat) i c =0.5a, i b =0.1a 0.8 v i c =1a, i b =0.2a 1.8 i c =1.5a, i b =0.5a 3 base-emitter satura tion voltage v be(sat) i c =0.5a, i b =0.1a 1 v i c =1a, i b =0.25 a 1.2 dynamic characteristics current-gain-bandwidth product f t i c =100ma, v ce =10 v, f=1mhz 4 10 mhz output capacitance cob v cb =10v, i e =0, f=0.1mhz 21 pf switching characteristics (table 1) delay time t d v cc =125v, i c =1a, i b1 =i b2 =0.2a, t p =25 s, duty cycle 1% 0.05 0.1 s rise time t r 0.5 1 s storage time t s 2 4 s fall time t f 0.4 0.7 s inductive load, clamped (table 1, figure 7) storage time t sv i c =1a,vclamp=300v, i b1 =0.2a,v be (off)=5v,t c =100c 1.7 4 s crossover time t c 0.29 0.75 s fall time t fi 0.15 s ? classification of h fe1 rank a b c d e f range 8 ~ 16 15 ~ 21 20 ~ 26 25 ~ 31 30 ~ 36 35 ~ 40
mje13002-e npn epitaxial silicon transistor unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r204-032.a ? application information table 1.test conditions for dynamic performance reverse bias safe operating area and inductive switching resistive switching test circuits pw 5v duty cycle? 10% t r ,t f ? 10ns 68 1k 1n4933 0.02 f 270 +5v 1k 1k 33 1n4933 33 +5v r b mje210 i b 2n2222 2n2905 47 1/2w 100 mje200 -v be (off) t.u.t. v cc mr826* vclamp *selected for? 1kv 5.1k 51 v ce l i c note pw and vcc adjusted for desired ic rb adjusted for desired ib1 1n4933 0.001 f +125v r b d1 -4.0v scope rc tut circuit values coil data : gap for 30 mh/2 a v cc =20v ferroxcube core #6656 lcoil=50mh vclamp=300v full bobbin ( ~ 200 turns) #20 v cc =125v r c =125 ? d1=1n5820 or equiv. r b =47 ? test waveforms output waveforms i c i c (pk) t f clamped t t f t1 v ce time t2 t v ce or vclamp output waveforms t1 adjusted to obtain ic test equipment scope-tektronics 475 or equivalent t1= lcoil(icpk) vcc t2= lcoil(icpk) vclamp +10.3v 25 s 0 -8.5v t r ,t f <10ns duty cycly=1.0% r b and rc adjusted for desired i b and ic table 2. typical inductive switching performance i c (amp) t c (c) t sv ( s) t rv ( s) t fi ( s) t ti ( s) t c ( s) 0.5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 1 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 1.5 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 note: all data recorded in the inductive switching circuit table 1 fig 1. inductive switching measurements
mje13002-e npn epitaxial silicon transistor unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r204-032.a ? switching times note in resistive switching circuits, rise, fall, and storage ti mes have been defined and apply to both current and voltage waveforms since they are in phase, however, for inductive loads which are common to switchmode power supplies and hammer drivers, current and voltage waveforms are not in phase. therefor e, separate measurements must be made on each wave form to determine the total switch ing time, for this reason, the following new terms have been defined. t sv =voltage storage time, 90% ib1 to 10% vclamp t rv =voltage rise time, 10-90% vclamp t fi =current fall time, 90-10% i c t ti =current tail, 10-2% i c t c =crossover time, 10% vclamp to 10% i c an enlarged portion of the inductive sw itching waveforms is shown in figure 1 to aid in the visual identity of these terms. for the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obt ained using the standard equation from an-222: pswt=1/2 vccic (tc)f in general, trv + tfi tc. however, at lower test currents this relationship may not be valid. P as is common with most switching transistor, resist ive switching is specifie d at 25c and has become a benchmark for designers. however, for desi gners of high frequency converter circuits , the user oriented specifications which make this a ?switchmode? transistor are the inductiv e switching speeds (tc and t sv) which are guaranteed at 100c. resistive switching performance t i m e , t ( c ) t i m e , t ( c ) 0.02 fig 3. turn-off time 0.03 0.05 2 10 7 5 1 0.7 0.1 0.07 0.2 0.1 0.3 0.5 0.7 1 3 2 0.5 0.3 0.2 t s vcc=125v ic/i b =5 t j =25c 0.02 fig 2. turn-on time 0.03 0.05 20 2 1 0.7 0.2 0.1 0.02 0.07 0.2 0.1 0.3 0.5 0.7 1 0 0.5 0.3 0.07 0.05 0.03 vcc=125v ic/i b =5 t j =25c t r td @ vbe(off)=5v t r collector current, i c (a) collector current, i c (a) r ( t ) , e f f e c t i v e t r a n s i e n t t h e r m a l r e s i s t a n c e ( n o r m a l i z e d )
mje13002-e npn epitaxial silicon transistor unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r204-032.a ? safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second break-down. safe operating area curves indicate ic ? vce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on tc=25 c; tj(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when tc 25 R c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figur e 5 may be found at any case tem-perature by using the app ropriate curve on figure 7. t j (pk) may be calculated from the data in figure 5. at hi gh case temperatures, thermal limitations will reduce the power that can be handled to values less than t he limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustai ned simultaneously during tu rn?off, in most cases, with the base to emitter junction reverse biased. under thes e conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe le vel for these devices is specified as reverse bias safe operating area and represents the voltage?current co nditions during re-verse biased tu rn?off. this rating is verified under clamped conditions so that the device is never subjected to an ava-lanche mode. figure 6 gives rbsoa characteristics. i c , c o l l e c t o r c u r r e n t ( a m p ) 5 fig 5. active region safe operating area 10 500 10 5 0.5 0.2 0.01 20 50 100 200 v ce ,collector-emittervoltage (volts) 300 2 1 0.1 0.05 0.02 thermal limit (single pulse) bonding wire limit second breakdown limit curves apply below rated vceo 10s 100s 1.0ms 5.0ms dc tc=25? v , v o l t a g e ( v o l t s ) fig 6. reverse bias safe operating area 1.6 1.2 0.8 0 vcev,collector-emitter lamp voltage(volts) 0.4 0 100 800 200 400 30 0 500 600 700 v be (off)=9v tj? 100? i b1 =1a 5v 3v 1.5v p o w e r d e r a t i n g f a c t o r 20 fig 7. forward bias power derating 40 60 160 1 0.8 0. 6 0.4 0.2 0 80 100 120 ic, case temperature (? ) 140 second breakdown derating thermal derating
mje13002-e npn epitaxial silicon transistor unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r204-032.a ? typical characteristics v c e , c o l l e c t o r - e m i t t e r v o l t a g e ( v o l t s ) 0.02 collector saturation region 0.05 0.01 2 2 1.6 1.2 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1 i b , base current (amp) ic=0.1a 0.3a 0.5a 1a 1.5a tj=25? v , v o l t a g e ( v o l t s ) 0.02 base-emitter voltage 0.03 0.05 2 1.4 1.2 1 0.8 0.6 0.4 0.07 0.2 0.1 0.3 0.5 0.7 i c , collector current (amp) 1 tj=-55c 25c 25c 150c v be (sat)@i c /i b =3 - - - - - - v be (on)@v ce =2v v , v o l t a g e ( v o l t s ) collector-emitter saturation region 0.35 0.3 0.25 0.2 0.15 0 i c , collector current (amp) i c /i b =3 0.1 0.05 0.02 0.03 0.05 2 0.07 0.2 0.1 0.3 0.5 0.7 1 i c , c o l l e c t o r c u r r e n t ( ? a ) collector cutoff region vbe,base-emitter voltage (volts) -0.4 -0.2 +0. 6 +0.2 0 +0.4 10 4 10 3 10 2 10 1 10 0 10 -1 reverse forward v ce =250v v , v o l t a g e ( v o l t s ) capacitance 500 300 200 100 70 5 v r ,reverse voltage (volts) 50 30 0.1 0.2 0.5 200 15 21020 50 100 20 10 7 500 1000 cib cob tj=150c 125c 100c 75c 50c 25c tj=-55c 25c 150c h f e , d c c u r r e n t g a i n dc current gain 80 60 40 30 20 10 8 6 4 tj=150? 25? -55? v ce =2v - - - - - -v ce =5v 0.02 0.03 0.05 0.07 2 0.1 0.2 0.3 0.5 0.7 1 i c , collector current (amp)
mje13002-e npn epitaxial silicon transistor unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r204-032.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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